BSC014NE2LSIATMA1 vs BSF134N10NJ3GXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014NE2LSIATMA1 disebabkan oleh Infineon dan BSF134N10NJ3GXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC014NE2LSIATMA1 BSF134N10NJ3GXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS 25V) Trench-gate OptiMOS planar
Drain-Source Voltage (VDS) 25 V 100 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Ta) 33 A —
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] —
Pulsed Drain Current (IDM, Tc) 100 A —
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 74 W —
Suhu Hubungan Operasi -55 °C to +150 °C —
Kemasan PG-TDSON-8-7 (SuperSO8) MG-WDSON-2 (CanPAK M)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 100 V
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Configuration — Single with built-in diode
Terminal Position — Bottom
Terminal Finish — Silver Nickel
Gambaran Suhu Operasi — -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

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