BSC015NE2LS5IATMA1 vs BSC010NE2LSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC015NE2LS5IATMA1 dari Infineon dan BSC010NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC015NE2LS5IATMA1 BSC010NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at Ta 33 A —
Continuous Drain Current (ID) at Tc 100 A —
On-Resistance RDS(on) Max at VGS=10V 1.5 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 50 W —
Paket PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8-7 (TDSON-8 EP)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 8
Technology OptiMOS 5 trench OptiMOS (Trench)
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C (TJ)
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg Typ [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Series / Family — OptiMOS 25V
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

Spek dan Sumber

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