BSC015NE2LS5IATMA1 vs BSC010NE2LSIATMA1 比較
詳細並排比較 BSC015NE2LS5IATMA1 由 Infineon 與 BSC010NE2LSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC015NE2LS5IATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-7 (TDSON-8 EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | 8 |
| Technology | OptiMOS 5 trench | OptiMOS (Trench) |
| 工作溫度範圍 | -55C to +150C (junction) | -55C to +150C (TJ) |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Series / Family | — | OptiMOS 25V |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |