BSC015NE2LS5IATMA1 vs BSC010NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC015NE2LS5IATMA1 disebabkan oleh Infineon dan BSC010NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC015NE2LS5IATMA1 BSC010NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at Ta 33 A —
Continuous Drain Current (ID) at Tc 100 A —
On-Resistance RDS(on) Max at VGS=10V 1.5 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 50 W —
Kemasan PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8-7 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Technology OptiMOS 5 trench OptiMOS (Trench)
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (TJ)
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg Typ [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Series / Family — OptiMOS 25V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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