BSC019N04LSTATMA1 vs BSC0921NDIATMA1 Perbandingan

Perbandingan bersamaan detil BSC019N04LSTATMA1 dari Infineon dan BSC0921NDIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC019N04LSTATMA1 BSC0921NDIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 25V (N-channel)
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] 31 A (per channel, package-limited)
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Rentang Suhu Kerja -55 C to +150 C —
Paket TDSON-8 (SuperSO8) 5x6 mm PG-TISON-8 (8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) 1 (per Infineon OptiMOS family)
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Manufacturer — Infineon Technologies
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Suhu Kerja — -55C to +150C (junction)
Primary Application — Synchronous buck converters, VRMs, POL regulators

Spek dan Sumber

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