BSC033N08NS5SCATMA1 vs BSC027N10NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC033N08NS5SCATMA1 dari Infineon dan BSC027N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC033N08NS5SCATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | NRND |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (Tc) | 144 A | — |
| Power Dissipation (Tc) | 136 W | 214 W |
| RDS(on) max @ VGS=10V | 3.3 mOhm | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Thermal Resistance RthJC | 0.86 K/W | — |
| Paket | PG-WSON-8-2 (SuperSO8 DSC) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | [DATA_NEEDED: Tj min/max] |
| Technology | Trench (OptiMOS 5) | OptiMOS 5 (100V) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Part Number | — | BSC027N10NS5ATMA1 |
| Channel Type | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |