BSC033N08NS5SCATMA1 vs BSC027N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC033N08NS5SCATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC033N08NS5SCATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | NRND |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (Tc) | 144 A | — |
| Power Dissipation (Tc) | 136 W | 214 W |
| RDS(on) max @ VGS=10V | 3.3 mOhm | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Thermal Resistance RthJC | 0.86 K/W | — |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | [DATA_NEEDED: Tj min/max] |
| Technology | Trench (OptiMOS 5) | OptiMOS 5 (100V) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Part Number | — | BSC027N10NS5ATMA1 |
| Channel Type | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |