BSC035N04LSGATMA1 vs BSC014N04LSATMA1 Perbandingan
Perbandingan bersamaan detil BSC035N04LSGATMA1 dari Infineon dan BSC014N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC035N04LSGATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| Suhu Hubung Kerja | -55°C to +150°C | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | PG-TDSON-8-1 (8-pin, exposed drain pad) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Rentang Suhu Kerja | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| Level MSL | — | 1 (unlimited) |