BSC036NE7NS3GATMA1 vs BSC093N15NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC036NE7NS3GATMA1 dari Infineon dan BSC093N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC036NE7NS3GATMA1 BSC093N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V —
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Rentang Suhu Kerja -55C to +175C [DATA_NEEDED: operating temperature range]
Paket PG-TDSON-8-7 (5x6 mm) SuperSO8 5x6 (PG-TDSON-8-7)
Tipe Mounting Surface Mount Surface Mount
Status RoHS ROHS3 Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL level]
Technology — OptiMOS 5 150V
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Bebas Halogen — [DATA_NEEDED: halogen free status]

Spek dan Sumber

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