BSC036NE7NS3GATMA1 vs BSC093N15NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC036NE7NS3GATMA1 disebabkan oleh Infineon dan BSC093N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC036NE7NS3GATMA1 BSC093N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V —
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Gambaran Suhu Operasi -55C to +175C [DATA_NEEDED: operating temperature range]
Kemasan PG-TDSON-8-7 (5x6 mm) SuperSO8 5x6 (PG-TDSON-8-7)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS ROHS3 Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL level]
Technology — OptiMOS 5 150V
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Boson Bebas — [DATA_NEEDED: halogen free status]

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