BSC040N08NS5ATMA1 vs BSC093N15NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N08NS5ATMA1 dari Infineon dan BSC093N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N08NS5ATMA1 BSC093N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC040N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 150V
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-7)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge Qg]
Status RoHS Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL level]
Primary Application Synchronous rectification in telecom and server power supplies —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Bebas Halogen — [DATA_NEEDED: halogen free status]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon