BSC040N08NS5ATMA1 vs BSC093N15NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC040N08NS5ATMA1 disebabkan oleh Infineon dan BSC093N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC040N08NS5ATMA1 BSC093N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC040N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 150V
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-7)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge Qg]
Status RoHS Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL level]
Primary Application Synchronous rectification in telecom and server power supplies —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Boson Bebas — [DATA_NEEDED: halogen free status]

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