BSC054N04NSGATMA1 vs IPB020NE7N3GATMA1 Perbandingan
Perbandingan bersamaan detil BSC054N04NSGATMA1 dari Infineon dan IPB020NE7N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC054N04NSGATMA1 | IPB020NE7N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC054N04NSGATMA1 | IPB020NE7N3GATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A | — |
| Continuous Drain Current (ID) at Ta=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation at Tc=25C | 57 W | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +175C (junction) |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TO263-3 (D²PAK, TO-263AB) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Gate Drive Voltage (recommended) | 10 V | — |
| Lead-Free Reflow | Yes | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| On-State Resistance RDS(on) | — | 2.0 mΩ typical (per part number code) |
| Configuration | — | Single |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per OptiMOS 3 family datasheet) |