BSC072N08NS5ATMA1 vs BSC014N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC072N08NS5ATMA1 dari Infineon dan BSC014N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC072N08NS5ATMA1 BSC014N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family BSC072N08NS5 (OptiMOS 5) —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 OptiMOS 5 (shielded-gate trench)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Tc 74 A 100 A
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 156 W
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: full min/max operating Tj] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Level MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID) at Ta — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Typ @ VGS=10V — 1.4 mOhm
On-Resistance RDS(on) Max @ VGS=10V — 1.45 mOhm

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