BSC072N08NS5ATMA1 vs BSC014N06NSATMA1 比較

詳細並排比較 BSC072N08NS5ATMA1 由 Infineon 與 BSC014N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC014N06NSATMA1 BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 ✓ 啟用中

規格比較

參數 BSC072N08NS5ATMA1 BSC014N06NSATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family BSC072N08NS5 (OptiMOS 5) —
電晶體類型 N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 OptiMOS 5 (shielded-gate trench)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Tc 74 A 100 A
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 156 W
封裝 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-17 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: full min/max operating Tj] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
MSL 等級 [DATA_NEEDED: MSL rating] 1
RoHS 狀態 Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID) at Ta — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Typ @ VGS=10V — 1.4 mOhm
On-Resistance RDS(on) Max @ VGS=10V — 1.45 mOhm

資料表與資源

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