BSC077N12NS3GATMA1 vs ISC0703NLSATMA1 Perbandingan
Perbandingan bersamaan detil BSC077N12NS3GATMA1 dari Infineon dan ISC0703NLSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC077N12NS3GATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 (120 V) | — |
| Tipe Transistor | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | 60 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Level MSL | 1 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=25C | — | 57 A |
| Power Dissipation (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 44 W |
| Technology | — | Trench MOSFET (OptiMOS family) |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Standard Package Quantity | — | 5,000 (reel) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS rating] |