BSC077N12NS3GATMA1 vs ISC0703NLSATMA1 比較

詳細並排比較 BSC077N12NS3GATMA1 由 Infineon 與 ISC0703NLSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon

BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon

BSC077N12NS3GATMA1 ✓ 啟用中
Infineon
ISC0703NLSATMA1 ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 ✓ 啟用中

規格比較

參數 BSC077N12NS3GATMA1 ISC0703NLSATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 (120 V) —
電晶體類型 N-Channel MOSFET (enhancement-mode trench) —
Drain-Source Voltage (VDS) 120 V 60 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
工作接面溫度 -55C to +150C —
封裝 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
MSL 等級 1 [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant Compliant
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 13 A
Continuous Drain Current (ID) at Tc=25C — 57 A
Power Dissipation (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 44 W
Technology — Trench MOSFET (OptiMOS family)
工作溫度範圍 — -55C to +150C (junction)
Standard Package Quantity — 5,000 (reel)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS rating]

資料表與資源

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