BSC093N15NS5ATMA1 vs BSC093N15NS5 Perbandingan
Perbandingan bersamaan detil BSC093N15NS5ATMA1 dari Infineon dan BSC093N15NS5 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC093N15NS5ATMA1 | BSC093N15NS5 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS™ 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typical value] |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Bebas Halogen | [DATA_NEEDED: halogen free status] | — |
| Part Number | — | BSC093N15NS5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc | — | 87 A |
| On-Resistance RDS(on) max at VGS=10V | — | 9.3 mOhm |
| Power Dissipation (Tc) | — | 139 W |
| AEC-Q100 Automotive Qualified | — | Not qualified (standard grade) |