BSC0993NDATMA1 vs IAUZ40N06S5N050ATMA1 Perbandingan

Perbandingan bersamaan detil BSC0993NDATMA1 dari Infineon dan IAUZ40N06S5N050ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC0993NDATMA1 IAUZ40N06S5N050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Series OptiMOS 5 30V —
Configuration Dual N-Channel (Array) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ Ta 17 A —
Paket PG-TISON-8 PG-TSDSON-8-33 (3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench)
Channel Mode Enhancement —
Rentang Suhu Kerja -55C to +150C (junction) -55C to +175C
ESD Protection Yes (integrated) —
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC) — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on), typ) — 5 mΩ at VGS=10 V
Maximum Power Dissipation (PD) — 71 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th), typ) — 1.7 V
Channel Type — N-Channel Enhancement Mode
Jumlah Pin — 8
Thermal Resistance (RthJC, max) — [DATA_NEEDED: RthJC]
Automotive Qualification — AEC-Q101 Qualified
Packaging — Tape & Reel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon