BSC0993NDATMA1 vs IAUZ40N06S5N050ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0993NDATMA1 disebabkan oleh Infineon dan IAUZ40N06S5N050ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC0993NDATMA1 IAUZ40N06S5N050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Series OptiMOS 5 30V —
Configuration Dual N-Channel (Array) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ Ta 17 A —
Kemasan PG-TISON-8 PG-TSDSON-8-33 (3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench)
Channel Mode Enhancement —
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +175C
ESD Protection Yes (integrated) —
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC) — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on), typ) — 5 mΩ at VGS=10 V
Maximum Power Dissipation (PD) — 71 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th), typ) — 1.7 V
Channel Type — N-Channel Enhancement Mode
Kiraan Pin — 8
Thermal Resistance (RthJC, max) — [DATA_NEEDED: RthJC]
Automotive Qualification — AEC-Q101 Qualified
Packaging — Tape & Reel

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