BSC117N08NS5ATMA1 vs BSC077N12NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC117N08NS5ATMA1 dari Infineon dan BSC077N12NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC117N08NS5ATMA1 BSC077N12NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC117N08NS5ATMA1 —
Technology OptiMOS 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET (enhancement-mode trench)
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) max 49 A (Tc) —
On-State Resistance (RDS(on)) max 11.7 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 50 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 8
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rentang Suhu Kerja -55 C to +150 C (typical MOSFET junction) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL 1 1
Part Family — OptiMOS 3 (120 V)
Drain-Source Voltage (VDS) — 120 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta — 13.4 A
Continuous Drain Current (ID) at Tc — 98 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Suhu Hubung Kerja — -55C to +150C
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

Spek dan Sumber

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