BSC117N08NS5ATMA1 vs BSC077N12NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan BSC077N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC117N08NS5ATMA1 BSC077N12NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC117N08NS5ATMA1 —
Technology OptiMOS 5 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET (enhancement-mode trench)
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) max 49 A (Tc) —
On-State Resistance (RDS(on)) max 11.7 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 50 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Gambaran Suhu Operasi -55 C to +150 C (typical MOSFET junction) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 1
Part Family — OptiMOS 3 (120 V)
Drain-Source Voltage (VDS) — 120 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta — 13.4 A
Continuous Drain Current (ID) at Tc — 98 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Suhu Hubungan Operasi — -55C to +150C
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

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