BSC117N08NS5ATMA1 vs BSC077N12NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC117N08NS5ATMA1 sa pamamagitan ng Infineon at BSC077N12NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC117N08NS5ATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | 8 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (typical MOSFET junction) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | 1 | 1 |
| Part Family | — | OptiMOS 3 (120 V) |
| Drain-Source Voltage (VDS) | — | 120 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |