BSC118N10NSGATMA1 vs BSC0902NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC118N10NSGATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC118N10NSGATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 2 —
FET Type N-Channel —
Mode Enhancement (Normal Level) —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at Ta=25C 11 A —
Continuous Drain Current (ID) at Tc=25C 71 A —
Power Dissipation (PD) at Tc=25C 114 W —
Paket PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +150 C —
Technology Trench MOSFET —
Lead Plating Pb-free —
Status RoHS Compliant —
Bebas Halogen Yes Yes, per IEC 61249-2-21
JEDEC Qualification Qualified per target application —
Target Application High-frequency SMPS, synchronous rectification —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Rentang Suhu Kerja — -55C to +150C (Tj)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Avalanche Rated — Yes (100% avalanche tested)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon