BSC120N03LSGATMA1 vs BSC020N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC120N03LSGATMA1 dari Infineon dan BSC020N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC120N03LSGATMA1 BSC020N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 12 A 28 A
Continuous Drain Current (ID) at Tc=25C 39 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 1 V to 2.2 V (typical range, per datasheet)
On-State Resistance RDS(on) at VGS=10V 12 mOhm (typical) —
On-State Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 28 W —
Rentang Suhu Kerja -55C to +150C (TJ) -55 C to +150 C (junction)
Paket PG-TDSON-8-5 (SuperSO-8, 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per Infineon datasheet)
Status RoHS Compliant Compliant
Series — OptiMOS 3
Gate-Source Voltage (VGS) — +/-20 V
On-State Resistance (RDS(on)) at VGS=10V — approximately 2.0 mOhm
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc=25C — 96 W
Paket / Case — PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm)
Packaging — Tape & Reel

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