BSC120N03LSGATMA1 vs BSC020N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC120N03LSGATMA1 disebabkan oleh Infineon dan BSC020N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC120N03LSGATMA1 BSC020N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 12 A 28 A
Continuous Drain Current (ID) at Tc=25C 39 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 1 V to 2.2 V (typical range, per datasheet)
On-State Resistance RDS(on) at VGS=10V 12 mOhm (typical) —
On-State Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 28 W —
Gambaran Suhu Operasi -55C to +150C (TJ) -55 C to +150 C (junction)
Kemasan PG-TDSON-8-5 (SuperSO-8, 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per Infineon datasheet)
Status RoHS Compliant Compliant
Series — OptiMOS 3
Gate-Source Voltage (VGS) — +/-20 V
On-State Resistance (RDS(on)) at VGS=10V — approximately 2.0 mOhm
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc=25C — 96 W
Kemasan / Case — PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm)
Packaging — Tape & Reel

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