BSC12DN20NS3GATMA1 vs BSC005N03LS5IATMA1 Perbandingan

Perbandingan bersamaan detil BSC12DN20NS3GATMA1 dari Infineon dan BSC005N03LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC005N03LS5IATMA1 BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC12DN20NS3GATMA1 BSC005N03LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 200V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID, Tc) 11.3 A —
Power Dissipation (PD, Tc) 50 W —
Paket PG-TDSON-8-5 PG-TDSON-8 FL (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold typical] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Technology OptiMOS power MOSFET OptiMOS 5 (N-channel trench MOSFET)
Status RoHS Compliant Compliant (per LCSC listing)
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Configuration Single N-channel —
Jumlah Pin 8 —
Part Number — BSC005N03LS5IATMA1
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at Ta — 42 A
Continuous Drain Current (ID) at Tc — 433 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max — 0.55 mΩ at VGS = 10 V, ID = 50 A
Gate-Source Threshold Voltage VGS(th) — 2 V (typ) at VGS = 10 mA
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 188 W
Suhu Hubung Kerja — -55 °C to +175 °C
Polarity — N-Channel

Spek dan Sumber

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