BSC12DN20NS3GATMA1 vs BSC005N03LS5IATMA1 比較
詳細並排比較 BSC12DN20NS3GATMA1 由 Infineon 與 BSC005N03LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 啟用中
規格比較
| 參數 | BSC12DN20NS3GATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| 封裝 | PG-TDSON-8-5 | PG-TDSON-8 FL (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS 狀態 | Compliant | Compliant (per LCSC listing) |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | — |
| 腳位數 | 8 | — |
| Part Number | — | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 42 A |
| Continuous Drain Current (ID) at Tc | — | 433 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | — | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | — | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 188 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |