BSD214SNH6327XTSA1 vs BSP135H6906XTSA1 Perbandingan

Perbandingan bersamaan detil BSD214SNH6327XTSA1 dari Infineon dan BSP135H6906XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSD214SNH6327XTSA1 BSP135H6906XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel Depletion Mode
Technology MOSFET (Metal Oxide), OptiMOS SIPMOS (planar high-voltage)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Paket SOT-363 (PG-SOT363-PO), 6-pin PG-SOT223-4 (SOT-223, 3+tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per datasheets.com parametric record)
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Level MSL 1 1 (unlimited)
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at TA=25C — 120 mA
RDS(on) Max at VGS=0V — 45 Ohm
Power Dissipation (PD) Max — 1.8 W
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) — Depletion mode (normally-on)
Jumlah Pin — 4 (3 leads + drain tab)
Lead-Free — Yes

Spek dan Sumber

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