BSD214SNH6327XTSA1 vs BSS192PH6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSD214SNH6327XTSA1 dari Infineon dan BSS192PH6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSD214SNH6327XTSA1 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 20 V 250 V
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Paket SOT-363 (PG-SOT363-PO), 6-pin PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) [DATA_NEEDED: Tj max / operating temp]
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Lead Plating Pb-free —
Status RoHS Compliant [DATA_NEEDED: explicit RoHS status from datasheet]
Level MSL 1 —
Standard Pack Quantity 3000 (Tape & Reel) —
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active

Spek dan Sumber

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