BSL207SPH6327XTSA1 vs BSS308PEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSL207SPH6327XTSA1 dari Infineon dan BSS308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSL207SPH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) 500 mW (Ta)
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
Paket TSOP-6 (PG-TSOP6-6) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Jumlah Pin 6 —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Tipe Transistor — P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -2 A (Ta)
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Rentang Suhu Kerja — -55 °C to +150 °C
Paket / Case — PG-SOT23 (SOT-23-3)
Jumlah Pin — 3
Qualification — AEC-Q101 Automotive
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs

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