BSL207SPH6327XTSA1 vs BSS308PEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL207SPH6327XTSA1 disebabkan oleh Infineon dan BSS308PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSL207SPH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) 500 mW (Ta)
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
Kemasan TSOP-6 (PG-TSOP6-6) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Kiraan Pin 6 —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Jenis Transistor — P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -2 A (Ta)
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Gambaran Suhu Operasi — -55 °C to +150 °C
Kemasan / Case — PG-SOT23 (SOT-23-3)
Bilangan Pin — 3
Qualification — AEC-Q101 Automotive
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs

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