BSO613SPVGXUMA1 vs BSD214SNH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSO613SPVGXUMA1 dari Infineon dan BSD214SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSO613SPVGXUMA1 BSD214SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) at TA=25C -3.44 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Paket PG-DSO-8-6 (Power-SO-8) SOT-363 (PG-SOT363-PO), 6-pin
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS (Trench) MOSFET (Metal Oxide), OptiMOS
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max at VGS=10V] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) max at VGS=4.5V] —
Rentang Suhu Kerja -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) -55C to +150C (junction)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-V] —
Level MSL MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes (per Infineon OptiMOS family) —
Jumlah Pin 8 (6 active, 2 thermal/NC) —
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

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