BSO613SPVGXUMA1 vs BSD214SNH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSO613SPVGXUMA1 disebabkan oleh Infineon dan BSD214SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSO613SPVGXUMA1 BSD214SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) at TA=25C -3.44 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Kemasan PG-DSO-8-6 (Power-SO-8) SOT-363 (PG-SOT363-PO), 6-pin
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS (Trench) MOSFET (Metal Oxide), OptiMOS
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max at VGS=10V] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) max at VGS=4.5V] —
Gambaran Suhu Operasi -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) -55C to +150C (junction)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-V] —
Aras MSL MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes (per Infineon OptiMOS family) —
Kiraan Pin 8 (6 active, 2 thermal/NC) —
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga