BSP135H6327XTSA1 vs BSP316PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSP135H6327XTSA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP135H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | — |
| Paket | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (TO-261-4) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | SIPMOS (P-channel MOSFET) |
| Rentang Suhu Kerja | -55C to +150C (junction, typical) | -55 C to +150 C (junction) |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Jumlah Pin | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |