BSP135H6327XTSA1 vs BSP316PH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6327XTSA1 disebabkan oleh Infineon dan BSP316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP135H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | — |
| Kemasan | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (TO-261-4) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | SIPMOS (P-channel MOSFET) |
| Gambaran Suhu Operasi | -55C to +150C (junction, typical) | -55 C to +150 C (junction) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Bilangan Pin | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |