BSP316PH6327XTSA1 vs BSC084P03NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSP316PH6327XTSA1 dari Infineon dan BSC084P03NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP316PH6327XTSA1 BSC084P03NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TA=25C -680 mA —
Total Power Dissipation (Ptot) at TA=25C 1.8 W —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Paket PG-SOT223-4 (TO-261-4) PG-TDSON-8-5 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C
Jumlah Pin 3 + thermal tab —
Channel Mode Enhancement —
Technology SIPMOS (P-channel MOSFET) —
Status RoHS Compliant Compliant
Level MSL 1 1 (unlimited)
Packaging Tape & Reel (H6327 suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (Ta) — 14.9 A
Continuous Drain Current (Tc) — 78.6 A
Rds(on) max @ VGS = -10 V — 6.1 mOhm
Rds(on) max @ VGS = -2.5 V — [DATA_NEEDED: Rds(on) at 2.5V]
Gate Threshold Voltage (VGS(th) typ) — -1.7 V
Total Gate Charge (Qg) — 58 nC @ VGS = -10 V
Input Capacitance (Ciss) — 3.19 nF
Output Capacitance (Coss) — 110 pF
Reverse Transfer Capacitance (Crss) — 1.52 nF
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Technology Family — OptiMOS P3

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