BSP316PH6327XTSA1 vs BSC084P03NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP316PH6327XTSA1 disebabkan oleh Infineon dan BSC084P03NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP316PH6327XTSA1 BSC084P03NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TA=25C -680 mA —
Total Power Dissipation (Ptot) at TA=25C 1.8 W —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Kemasan PG-SOT223-4 (TO-261-4) PG-TDSON-8-5 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C
Bilangan Pin 3 + thermal tab —
Channel Mode Enhancement —
Technology SIPMOS (P-channel MOSFET) —
Status RoHS Compliant Compliant
Aras MSL 1 1 (unlimited)
Packaging Tape & Reel (H6327 suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (Ta) — 14.9 A
Continuous Drain Current (Tc) — 78.6 A
Rds(on) max @ VGS = -10 V — 6.1 mOhm
Rds(on) max @ VGS = -2.5 V — [DATA_NEEDED: Rds(on) at 2.5V]
Gate Threshold Voltage (VGS(th) typ) — -1.7 V
Total Gate Charge (Qg) — 58 nC @ VGS = -10 V
Input Capacitance (Ciss) — 3.19 nF
Output Capacitance (Coss) — 110 pF
Reverse Transfer Capacitance (Crss) — 1.52 nF
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Technology Family — OptiMOS P3

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