BSP316PH6327XTSA1 vs BSS192PH6327FTSA1 Perbandingan
Perbandingan bersamaan detil BSP316PH6327XTSA1 dari Infineon dan BSS192PH6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP316PH6327XTSA1 | BSS192PH6327FTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Paket | PG-SOT223-4 (TO-261-4) | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | [DATA_NEEDED: Tj max / operating temp] |
| Jumlah Pin | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | MOSFET (Metal Oxide) |
| Status RoHS | Compliant | [DATA_NEEDED: explicit RoHS status from datasheet] |
| Level MSL | 1 | — |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-to-Source Voltage (Vdss) | — | 250 V |
| Continuous Drain Current (Id) @ 25C | — | 190 mA (Ta) |
| Power Dissipation (Pd) | — | 1 W (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.8 V, 10 V |
| Rds On (Max) @ Id, Vgs | — | [DATA_NEEDED: Rds On max @ Vgs] |
| Vgs(th) (Max) | — | [DATA_NEEDED: gate threshold voltage max] |
| Vgs(th) (Typ) | — | [DATA_NEEDED: gate threshold voltage typ] |
| Automotive Qualification | — | AEC-Q101 (per distributor listing) |
| Series | — | SIPMOS Small-Signal-Transistor |
| Part Status | — | Active |