BSP88H6327XTSA1 vs BSS192PH6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSP88H6327XTSA1 dari Infineon dan BSS192PH6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP88H6327XTSA1 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Paket PG-SOT223-4 (SOT-223-3) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Tipe Mounting Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
Suhu Kerja -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) MOSFET (Metal Oxide)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL level] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
FET Type — P-Channel
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Rentang Suhu Kerja — [DATA_NEEDED: Tj max / operating temp]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active
Status RoHS — [DATA_NEEDED: explicit RoHS status from datasheet]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon