BSP88H6327XTSA1 vs BSS192PH6327FTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP88H6327XTSA1 disebabkan oleh Infineon dan BSS192PH6327FTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP88H6327XTSA1 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Kemasan PG-SOT223-4 (SOT-223-3) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Jenis Pemasangan Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
Suhu Operasi -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) MOSFET (Metal Oxide)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL level] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
FET Type — P-Channel
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max / operating temp]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active
Status RoHS — [DATA_NEEDED: explicit RoHS status from datasheet]

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