BSR802NL6327HTSA1 vs BSP315PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSR802NL6327HTSA1 dari Infineon dan BSP315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSR802NL6327HTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR802NL6327HTSA1 | — |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | OptiMOS (enhancement mode) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Paket | PG-SC59-3 (SC-59 / SOT-346) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55C to +150C | — |
| Qualification | Automotive | — |
| Status RoHS | Compliant | — |
| Jumlah Pin | 3 | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Rentang Suhu Kerja | — | -55 C to +150 C (junction) |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |
| Level MSL | — | 1 (per JEDEC J-STD-020) |