BSR802NL6327HTSA1 vs BSP315PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR802NL6327HTSA1 disebabkan oleh Infineon dan BSP315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSR802NL6327HTSA1 BSP315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSR802NL6327HTSA1 —
Technology OptiMOS 2 (N-Channel Trench MOSFET) OptiMOS (enhancement mode)
Channel Type N-Channel —
Drain-Source Voltage (VDS) max 20 V —
Continuous Drain Current (ID) max 3.7 A (Ta=25C) —
Power Dissipation (PD) max 500 mW (Ta=25C) —
On-Resistance (RDS(on)) typ 23 mOhm @ VGS=4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical and min/max]
Kemasan PG-SC59-3 (SC-59 / SOT-346) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +150C —
Qualification Automotive —
Status RoHS Compliant —
Kiraan Pin 3 —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -1.17 A (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Gate-Source Voltage (VGS) — ±20 V (max)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Gambaran Suhu Operasi — -55 C to +150 C (junction)
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant
Aras MSL — 1 (per JEDEC J-STD-020)

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