BSS123NH6327XTSA1 vs BSL316CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS123NH6327XTSA1 dari Infineon dan BSL316CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS123NH6327XTSA1 BSL316CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] [DATA_NEEDED: VGS(th) min/typ/max]
Gate-Source Voltage Max (VGS) ±20 V —
Paket PG-SOT23 (SOT-23-3) PG-TSOP6-6 (TSOP6, 6-pin)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (junction) —
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Part Family — OptiMOS small-signal complementary MOSFET
Configuration — Complementary pair (1 N-channel + 1 P-channel in one package)
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
Suhu Kerja — -55C to +150C (junction)
Technology — OptiMOS low-voltage MOSFET
Channel Type — N-channel + P-channel (dual)
Jumlah Pin — 6
Status RoHS — Compliant
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

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