BSS123NH6327XTSA1 vs BSL316CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123NH6327XTSA1 disebabkan oleh Infineon dan BSL316CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS123NH6327XTSA1 BSL316CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] [DATA_NEEDED: VGS(th) min/typ/max]
Gate-Source Voltage Max (VGS) ±20 V —
Kemasan PG-SOT23 (SOT-23-3) PG-TSOP6-6 (TSOP6, 6-pin)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C (junction) —
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Part Family — OptiMOS small-signal complementary MOSFET
Configuration — Complementary pair (1 N-channel + 1 P-channel in one package)
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
Suhu Operasi — -55C to +150C (junction)
Technology — OptiMOS low-voltage MOSFET
Channel Type — N-channel + P-channel (dual)
Kiraan Pin — 6
Status RoHS — Compliant
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

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