BSS127H6327XTSA2 vs BSL308CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSL308CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSL308CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) 500 mW
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) PG-TSOP6-6 (TSOP-6, 6 pins)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) Compliant
Bebas Halogen Yes, per IEC 61249-2-21 Yes (per Infineon product family convention)
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Rentang Suhu Kerja — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes

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