BSS127H6327XTSA2 vs BSL308CH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS127H6327XTSA2 sa pamamagitan ng Infineon at BSL308CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
BSL308CH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSS127H6327XTSA2 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel SIPMOS, enhancement mode | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 21 mA (Ta) | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | 500 mW |
| Temperature ng Junction na Operasyon | -55 C to +150 C | — |
| Packhaging | SOT-23-3 (PG-SOT23) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 | — |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant (lead-free) | Compliant |
| Wala sa Halogen | Yes, per IEC 61249-2-21 | Yes (per Infineon product family convention) |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Hanay ng Temperature na Operasyon | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |