BSS127H6327XTSA2 vs BSS192PH6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSS192PH6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode P-Channel
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 AEC-Q101 (per distributor listing)
Status RoHS Compliant (lead-free) [DATA_NEEDED: explicit RoHS status from datasheet]
Bebas Halogen Yes, per IEC 61249-2-21 —
Level MSL [DATA_NEEDED: MSL rating] —
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Rentang Suhu Kerja — [DATA_NEEDED: Tj max / operating temp]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon