BSS214NWH6327XTSA1 vs BSL606SNH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS214NWH6327XTSA1 dari Infineon dan BSL606SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS214NWH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS3 trench MOSFET |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| Paket | PG-SOT323 (SOT-323-3) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Status RoHS | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| Tipe Transistor | — | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| Rentang Suhu Kerja | — | -55C to +150C (Tj) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |