BSS214NWH6327XTSA1 vs BSL606SNH6327XTSA1 比較
詳細並排比較 BSS214NWH6327XTSA1 由 Infineon 與 BSL606SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS214NWH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS3 trench MOSFET |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| 封裝 | PG-SOT323 (SOT-323-3) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| RoHS 狀態 | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| 電晶體類型 | — | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| 工作溫度範圍 | — | -55C to +150C (Tj) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |